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Impact of non-idealities on the conductance characteristics of superconductor-insulator-normal metal-insulator-superconductor tunnel junctions

机译:非理想性对超导体-绝缘体-普通金属-绝缘体-超导体隧道结电导特性的影响

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摘要

We have investigated the effect of asymmetry in tunnelling resistance of individualnormal metal-insulator-superconductor (NIS) tunnel junctions that constitute a SINIS pair,both experimentally and theoretically. Ours results clearly demonstrate that any finiteasymmetry in the tunnelling resistance gives rise to an excess current, as compared to itssymmetric counterpart, both below and around the gap edge. The signature of this excesscurrent is visible almost up to the critical temperature. We find that this apparent broadeningof the density of states is purely electrical in origin. Our calculations also show that any finiteresistance that is in series with the tunnelling resistance, such as the resistance of normal metalisland or the line resistance in case of two probe measurements, leads to a suppression of theconductance maxima at the gap edge. This is a manifestation of the finite voltage drop acrossthe series resistor. Our experimental results validate our theoretical prediction.
机译:我们在实验和理论上都研究了不对称性对构成SINIS对的单个正常金属-绝缘体-超导体(NIS)隧道结的隧穿电阻的影响。我们的结果清楚地表明,在间隙边缘以下和附近,与隧道对称电阻相比,隧道电阻中的任何有限不对称都会产生过量电流。几乎在临界温度下都可以看到这种过电流的信号。我们发现,状态密度的这种明显拓宽纯粹是电性的。我们的计算还表明,与隧穿电阻串联的任何有限电阻(例如,正常金属岛的电阻或两次探针测量的情况下的线路电阻)都会导致间隙边缘处的电导最大值受到抑制。这是串联电阻两端的有限压降的体现。我们的实验结果验证了我们的理论预测。

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